Observation of the Spin Hall Effect in Semiconductors

2004/11/12 by Yuichiro K. Kato, Roberto C. Myers, A. C. Gossard +1 · 57 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena

paper · doi:10.1126/science.1105514

openalex publication_date 2004/11/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31

Abstract

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

Citations

• The fractional quantum Hall effect
• Spin-Orbit Coupling Effects in Zinc Blende Structures
• Current-Induced Spin Polarization in Strained Semiconductors
• Dissipationless Quantum Spin Current at Room Temperature

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