2009/07/31 by Fan Zhao, F. Zhao, A. Balocchi +8
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.other
paper · pdf · doi:10.1063/1.3273393
published as Appl. Phys. Lett. 95, 241104 (2009) · 4 pages, 3 figures
openalex publication_date 2009/12/14 · arxiv created 2010/03/01 · arxiv updated 2010/03/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/01
By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a simple nonmagnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a spin dependent photoconductivity change reaching up to 40% without the need of an external magnetic field. The spin dependent photoconductivity change relies on the efficient spin filtering effect of conduction band electrons on N-induced Ga self-interstitial deep paramagnetic centers.