Theory of Spin Hall Conductivity inn-Doped GaAs

2005/05/21 by Hans-Andreas Engel, Hans‐Andreas Engel, Bertrand I. Halperin +2 · 5 citations
Engineering · Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.95.166605

published as Phys. Rev. Lett. 95, 166605 (2005) · 5 pages, 1 figure

arxiv created 2005/05/21 · openalex publication_date 2005/10/13 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].

Citations

• Spin Current and Polarization in Impure Two-Dimensional Electron Systems with Spin-Orbit Coupling
• Observation of the Spin Hall Effect in Semiconductors
• Spin susceptibilities, spin densities, and their connection to spin currents
• Side-Jump Mechanism for the Hall Effect of Ferromagnets
• Spin-Orbit Coupling Effects in Zinc Blende Structures
• Dissipationless Quantum Spin Current at Room Temperature
• Theory of the anomalous Hall effect from the Kubo formula and the Dirac equation

Cited by

• Frequency doubling and memory effects in the spin Hall effect
• Enhanced spin Hall effect by tuning antidot potential: Proposal for a spin filter
• Ultrafast extrinsic spin-Hall currents
• Sign Change of the Spin Hall Effect due to Electron Correlation in Nonmagnetic CuIr Alloys
• Non-Abelian gauge fields in the gradient expansion: Generalized Boltzmann and Eilenberger equations