2008/12/23 by Yuriy V. Pershin, Yu. V. Pershin, Massimiliano Di Ventra +1 · 1 citation
Computer Science · Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #Neural Networks and Reservoir Computing #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.79.153307
published as Phys. Rev. B 79, 153307 (2009)
arxiv created 2008/12/23 · openalex publication_date 2009/04/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.