2007/05/25 by Bin Zhou, Chao-Xing Liu, Chao‐Xing Liu +1 · 1 citation
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1209/0295-5075/79/47010
published as Europhys. Lett. 79,47010 (2007)
arxiv created 2007/05/25 · openalex publication_date 2007/07/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of the thickness of the quantum well may cause a transition of the Berry phase in a two-dimensional hole gas. Correspondingly, the jump of the spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.