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Spin-dependent electron transport through a parallel double-quantum-dot structure

2008/09/29 by Wei‐Jiang Gong, Weijiang Gong, Yisong Zheng
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1016/j.physe.2008.10.007

7 pages, 7 figures. Submit to Physica E

arxiv created 2008/09/29 · openalex publication_date 2008/10/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Electron transport properties in a parallel double-quantum-dot structure with three-terminals are theoretically studied. By introducing a local Rashba spin-orbit coupling, we find that an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state. As a result, spin polarization and spin separation can be simultaneously realized in this structure. And spin polarizations in different terminals can be inverted by tuning the structure parameters. The underlying quantum interference that gives rise to such a result is analyzed in the language of Feynman paths for the electron transmission.

Citations