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Electric-dipole-induced spin resonance in disordered semiconductors

2006/02/26 by Mathias Duckheim, Daniel Loss · 1 citation
Physics and Astronomy · #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1038/nphys238

published as Nature Physics 2, 195-199 (2006)

openalex publication_date 2006/02/26 · arxiv created 2006/05/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled by strong spin-orbit interaction (SOI) in semiconductors. A powerful way of manipulating spins in such structures is electric dipole induced spin resonance (EDSR), where the radio-frequency fields driving the spins are electric, and not magnetic like in standard paramagnetic resonance. Here, we present a theoretical study of EDSR for a two-dimensional electron gas in the presence of disorder where random impurities not only determine the electric resistance but also the spin dynamics via SOI. Considering a specific geometry with the electric and magnetic fields parallel and in-plane, we show that the magnetization develops an out-of-plane component at resonance which survives the presence of disorder. We also discuss the spin Hall current generated by EDSR. These results are derived in a diagrammatic approach with the dominant effects coming from the spin vertex correction, and the optimal parameter regime for observation is identified.

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