2007/05/31 by M. I. Dyakonov
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.99.126601
published as Phys. Rev. Lett. 99, 126601 (2007) · 4 pages, 3 figures. Minor corrections corresponding to the published version
openalex publication_date 2007/09/17 · arxiv created 2007/09/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An applied magnetic field will destroy the edge spin polarization leading to a positive magnetoresistance. This effect provides means to study spin accumulation by electrical measurements. The origin and the general properties of the phenomenological equations describing coupling between charge and spin currents are also discussed.