2008/08/16 by Kenneth S. Burch, K. S. Burch, D. D. Awschalom +1 · 1 citation
Materials Science · Physics and Astronomy · #Heusler alloys: electronic and magnetic properties #Magnetic properties of thin films #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1016/j.jmmm.2008.08.060
published as Journal of Magnetism and Magnetic Materials 320 (2008), pp. 3207-3228 · Topical Review
openalex publication_date 2008/08/16 · arxiv created 2008/10/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.