Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors

2005/05/31 by Xiao-Liang Qi, Yong-Shi Wu, Shou-Cheng Zhang · 2 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.74.085308

published as PRB 74 085308 (2006) · the expanded version published on Phys. Rev. B

openalex publication_date 2006/08/10 · arxiv created 2006/08/31 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/04

Abstract

We propose models of two-dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk and a ``holographic metal'' at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.

Citations

• Spin Current and Polarization in Impure Two-Dimensional Electron Systems with Spin-Orbit Coupling
• Spin-Hall effect in a disordered two-dimensional electron system
• Observation of the Spin Hall Effect in Semiconductors
• SU(2)non-Abelian holonomy and dissipationless spin current in semiconductors
• Absence of vertex correction for the spin Hall effect inp-type semiconductors
• Spin-Hall Insulator
• Dissipationless Quantum Spin Current at Room Temperature
• Numerical Study of the Spin-Hall Conductance in the Luttinger Model

Cited by

• Photoinduced Transition between Conventional and Topological Insulators in Two-Dimensional Electronic Systems
• Massive Dirac fermions and spin physics in an ultrathin film of topological insulator