High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

2014/01/31 by Jingsi Qiao, Xianghua Kong, Zhi-Xin Hu +2 · 29 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Anisotropy #Band gap #Chemistry #Circular dichroism #Condensed matter physics #Crystallography #Dichroism #Direct and indirect band gaps #Electron mobility #Graphene #Graphene research and applications #Linear dichroism #MXene and MAX Phase Materials #Materials science #Monolayer #Nanoelectronics #Nanotechnology #Optics #Optoelectronics #Physics #Semiconductor #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1038/ncomms5475

published as Nature Communications 5, 4475 (2014) · Nature Communications, in press (2014). 3 figures and 2 tables together with a supporting info of 5 figures and 3 tables

arxiv created 2014/06/25 · arxiv updated 2014/07/08 · openalex publication_date 2014/07/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we present a detailed theoretical investigation of the atomic and electronic structure of few-layer black phosphorus (BP) to predict its electrical and optical properties. This system has a direct bandgap, tunable from 1.51 eV for a monolayer to 0.59 eV for a five-layer sample. We predict that the mobilities are hole-dominated, rather high and highly anisotropic. The monolayer is exceptional in having an extremely high hole mobility (of order 10,000 cm2 V−1 s−1) and anomalous elastic properties which reverse the anisotropy. Light absorption spectra indicate linear dichroism between perpendicular in-plane directions, which allows optical determination of the crystalline orientation and optical activation of the anisotropic transport properties. These results make few-layer BP a promising candidate for future electronics. Two-dimensional (2D) materials with a large electronic bandgap in addition to high carrier mobility are required for future nanoelectronics. Here, the authors present a theoretical investigation of black phosphorous, a new category of 2D semiconductor with high potential for nanoelectronic applications.

Citations

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Cited by

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• Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge
• Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene
• Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass
• Exciton Band Structure in Two-Dimensional Materials
• Strain-induced topological phase transition in phosphorene and in phosphorene nanoribbons
• Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility
• The role of H 2 O and O 2 molecules and phosphorus vacancies in the structure instability of phosphorene
• H 2 O incorporation in the phosphorene/a-SiO 2 interface: a first-principles study
• Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
• Accessing the Anisotropic Nonthermal Phonon Populations in Black Phosphorus
• Two dimensional allotropes of arsenene with a wide range of high and anisotropic carrier mobility
• Monolayer, Bilayer, and Heterostructures of Green Phosphorene for Water Splitting and Photovoltaics
• Quantum transport through the edge states of zigzag phosphorene nanoribbons in presence of a single point defect: analytic Green’s function method
• Layer and doping tunable ferromagnetic order in two-dimensional CrS2 layers
• Modulation of electronic and mechanical properties of phosphorene through strain
• Electric field induced gap modification in ultrathin blue phosphorus
• Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures
• Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms
• Single-Layered Hittorf’s Phosphorus: A Wide-Bandgap High Mobility 2D Material
• Native point defects in few-layer phosphorene
• Unambiguous identification of monolayer phosphorene by phase-shifting interferometry
• Mobility of two-dimensional materials from first principles in an accurate and automated framework
• Kinetics-Limited Two-Step Growth of van der Waals Puckered Honeycomb Sb Monolayer
• Enhanced thermoelectric performance of phosphorene by strain-induced band convergence
• Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus
• Edge effects on the electronic properties of phosphorene nanoribbons
• Protective layer enhanced the stability and superconductivity of tailored antimonene bilayer
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Related

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• Layer-Dependent Electronic and Optical Properties of 2D Black Phosphorus: Fundamentals and Engineering
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