2016/08/18 by Esmaeil Taghizadeh Sisakht, E. Taghizadeh Sisakht, Farhad Fazileh +5 · 121 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Band gap #Condensed matter physics #Geometry #Hamiltonian (control theory) #MXene and MAX Phase Materials #Materials science #Perpendicular #Phase transition #Phosphorene #Physics #Topological Materials and Phenomena #Topology (electrical circuits) #Zigzag #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.94.085417
published in Physical review. B./Physical review. B 94(8) (American Physical Society) · 10 pages, 6 figures
arxiv created 2016/08/18 · openalex publication_date 2016/08/18 · arxiv updated 2016/08/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Using the tight-binding (TB) approximation with inclusion of the spin-orbit interaction, we predict a topological phase transition in the electronic band structure of phosphorene in the presence of axial strains. We derive a low-energy TB Hamiltonian that includes the spin-orbit interaction for bulk phosphorene. Applying a compressive biaxial in-plane strain and perpendicular tensile strain in ranges where the structure is still stable leads to a topological phase transition. We also examine the influence of strain on zigzag phosphorene nanoribbons (zPNRs) and the formation of the corresponding protected edge states when the system is in the topological phase. For zPNRs up to a width of 100 nm the energy gap is at least three orders of magnitude larger than the thermal energy at room temperature.