2016/05/12 by Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Anisotropy #Channel (broadcasting) #Effective mass (spring–mass system) #Ferroelectric and Negative Capacitance Devices #Logic gate #MOSFET #Nanowire Synthesis and Applications #Phosphorene #Quantum tunnelling #Scaling #Transistor #cond-mat.mes-hall
paper · pdf · doi:10.1038/srep31501
published as Scientific reports 6 (2016): 31501
arxiv created 2016/05/12 · openalex created_date 2016/06/24 · openalex publication_date 2016/08/19 · arxiv updated 2016/08/30 · openalex updated_date 2026/08/05
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last four decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design. Here, we show that by using channel materials with an anisotropic effective mass, the channel can be scaled down to 1 nm and still provide an excellent switching performance in phosphorene nanoribbon MOSFETs. To solve power consumption challenge besides dimension scaling in conventional transistors, a novel tunnel transistor is proposed which takes advantage of anisotropic mass in both ON- and OFF-state of the operation. Full-band atomistic quantum transport simulations of phosphorene nanoribbon MOSFETs and TFETs based on the new design have been performed as a proof.