2014/11/30 by Z. Y. Zhang, Jiafeng Xie, D. Z. Yang +3
Physics and Astronomy · #cond-mat.mtrl-sci #physics.comp-ph
paper · pdf · doi:10.7567/apex.8.055201
arXiv admin note: text overlap with arXiv:1401.5045 by other authors
arxiv created 2015/04/19 · arxiv updated 2015/06/23
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.