Negative compressibility in graphene-terminated black phosphorus heterostructures

2015/10/28 by Yingying Wu, Xiaolong Chen, Zefei Wu +8 · 1 citation
Materials Science · Physics and Astronomy · #2D Materials and Applications #Black phosphorus #Capacitance #Compressibility #Condensed matter physics #Coulomb #Electrode #Electron #Graphene #Graphene research and applications #Heterojunction #Hexagonal boron nitride #MXene and MAX Phase Materials #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum mechanics #Thermodynamics #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.93.035455

published as Phys. Rev. B 93, 035455(2016)

arxiv created 2015/10/28 · openalex publication_date 2016/01/29 · arxiv updated 2016/04/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Negative compressibility is a many-body effect wherein strong correlations give rise to an enhanced gate capacitance in two-dimensional (2D) electronic systems. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explain the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

Citations

• High-mobility field-effect transistors based on transition metal dichalcogenides
• Thermodynamic Density of States of Two-Dimensional GaAs Systems near the Apparent Metal-Insulator Transition
• Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO₃/SrTiO₃ interfaces
• Single-layer MoS2 transistors
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

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