2020/02/04 by Gao, Ruiyan, Ying, Zhehan, An, Liheng +7
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · doi:10.48550/arxiv.2002.01114
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.