High-mobility field-effect transistors based on transition metal dichalcogenides

2004/01/14 by Vitaly Podzorov, V. Podzorov, M. E. Gershenson +5 · 2 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Ambipolar diffusion #Charge carrier #Chemistry #Electrical engineering #Electron #Electron mobility #Electronics #Fabrication #Field-effect transistor #Flexibility (engineering) #Graphene research and applications #Materials science #Nanotechnology #Nanowire Synthesis and Applications #Optoelectronics #Physics #Semiconductor #Transistor #Transition metal #Voltage #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1063/1.1723695

3 pages

arxiv created 2004/01/14 · openalex publication_date 2004/04/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.

Citations

• Electrically Induced Optical Emission from a Carbon Nanotube FET
• Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
• Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s
• Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

Cited by

• Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors
• Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors