2013/01/19 by Wan Sik Hwang, Maja Remskar, Maja Remškar +10
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Electrical engineering #Engineering #Field-effect transistor #Graphene research and applications #MXene and MAX Phase Materials #Materials science #Nanotechnology #Optoelectronics #Transistor #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4789975
published as Appl. Phys. Lett. 102, 043116 (2013)
arxiv created 2013/01/19 · openalex publication_date 2013/01/28 · arxiv updated 2015/01/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.