2003/05/01 by James A. Misewich, Richard Martel, Phaedon Avouris +3 · 5 citations
Materials Science · Engineering · Physics and Astronomy · #Carbon Nanotubes in Composites #Nanowire Synthesis and Applications #Mechanical and Optical Resonators
paper · doi:10.1126/science.1081294
openalex publication_date 2003/05/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31
Polarized infrared optical emission was observed from a carbon nanotube ambipolar field-effect transistor (FET). An effective forward-biased p-n junction, without chemical dopants, was created in the nanotube by appropriately biasing the nanotube device. Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotube. These observations are consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts. This arrangement is a novel optical recombination radiation source in which the electrons and holes are injected into a nearly field-free region. Sucha source may form the basis for ultrasmall integrated photonic devices.