2017/01/30 by Yangjin Lee, Jun-Yeong Yoon, Declan Scullion +5
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Atomic layer deposition #Atomic units #Band gap #Chemistry #Enhanced Data Rates for GSM Evolution #Geometry #High-resolution transmission electron microscopy #Layer (electronics) #MXene and MAX Phase Materials #Materials science #Nanotechnology #Nanowire Synthesis and Applications #Optoelectronics #Phosphorene #Physics #Semiconductor #Transmission electron microscopy #Zigzag #cond-mat.mes-hall #van der Waals force
paper · pdf · doi:10.1088/1361-6463/aa5583
published as J. Phys. D: Appl. Phys. 50, 084003, (2017) · 20 pages, 6 figures
openalex publication_date 2017/01/30 · arxiv created 2017/01/31 · arxiv updated 2017/02/01 · openalex created_date 2020/11/23 · openalex updated_date 2026/08/05
Abstract Black phosphorus (BP) has recently emerged as an alternative 2D semiconductor owing to its fascinating electronic properties such as tunable bandgap and high charge carrier mobility. The structural investigation of few-layer BP, such as identification of layer thickness and atomic-scale edge structure, is of great importance to fully understand its electronic and optical properties. Here we report atomic-scale analysis of few-layered BP performed by aberration corrected transmission electron microscopy (TEM). We establish the layer-number-dependent atomic resolution imaging of few-layer BP via TEM imaging and image simulations. The structural modification induced by the electron beam leads to revelation of crystalline edge and formation of BP nanoribbons. Atomic resolution imaging of BP clearly shows the reconstructed zigzag (ZZ) edge structures, which is also corroborated by van der Waals first principles calculations on the edge stability. Our study on the precise identification of BP thickness and atomic-resolution imaging of edge structures will lay the groundwork for investigation of few-layer BP, especially BP in nanostructured forms.