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Hot Carrier–Assisted Intrinsic Photoresponse in Graphene

2011/08/31 by Nathaniel M. Gabor, Justin C. W. Song, Qiong Ma +9 · 12 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Bilayer graphene #Charge carrier #Graphene #Graphene research and applications #Materials science #Monolayer #Nanoscopic scale #Nanotechnology #Optoelectronics #Photonics #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1126/science.1211384

published as Science 334 (6056), p. 648-652 (2011) · 19 pages, 4 figures

openalex publication_date 2011/10/07 · arxiv created 2011/11/17 · arxiv updated 2011/11/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier-assisted thermoelectric technologies for efficient solar energy harvesting.

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