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Cooling of photoexcited carriers in graphene by internal and substrate phonons

2012/05/31 by Tony Low, Vasili Perebeinos, Raseong Kim +2 · 4 citations
Engineering · Materials Science · Physics and Astronomy · #Atomic physics #Boltzmann equation #Condensed matter physics #Excited state #Graphene #Graphene research and applications #Materials science #Nanotechnology #Optoelectronics #Phonon #Photodetection #Photodetector #Photoexcitation #Physics #Polar #Relaxation (psychology) #Substrate (aquarium) #Thermal Radiation and Cooling Technologies #Thermal properties of materials #Thermodynamics #Thermoelectric effect #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.86.045413

published as Phys. Rev. B 86, 045413 (2012) · related papers at http://tonylow.info/

openalex publication_date 2012/07/09 · arxiv created 2012/08/14 · arxiv updated 2012/08/15 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady-state carrier temperatures and photocarrier densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

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