2007/11/30 by J. H. Chen, Jianhao Chen, Chaun Jang +7 · 4 citations
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Thermal properties of materials #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1038/nnano.2008.58
published as Nature Nanotechnology 3, 206 - 209 (2008) · 16 pages, 3 figures
arxiv created 2007/12/05 · openalex publication_date 2008/03/23 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 1012 cm-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x105 cm2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x104 cm2/Vs[9]) and semiconducting carbon nanotubes (~1x105 cm2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x104 cm2/Vs, pointing out the importance of substrate choice for graphene devices[13].