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Relaxation of optically excited carriers in graphene

2011/03/29 by Raseong Kim, Vasili Perebeinos, Phaedon Avouris · 2 citations
Materials Science · Physics and Astronomy · #Atomic physics #Boltzmann equation #Carrier scattering #Charge carrier #Condensed matter physics #Dielectric #Electron #Excited state #Graphene #Graphene research and applications #Laser #Materials science #Nanotechnology #Optics #Optoelectronics #Phonon #Phonon scattering #Photon #Photon energy #Physics #Population inversion #Quantum and electron transport phenomena #Quantum mechanics #Relaxation (psychology) #Scattering #Thermal properties of materials #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.84.075449

published as Phys. Rev. B 84, 075449 (2011) · 4 pages, 4 figures

arxiv created 2011/03/29 · openalex publication_date 2011/08/10 · arxiv updated 2011/09/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We explore the relaxation of photoexcited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy, graphene doping, and dielectric constant.

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