Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

2006/11/30 by Eduardo V. Castro, K. S. Novoselov, Kostya S. Novoselov +9 · 15 citations
Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.99.216802

published as Phys. Rev. Lett. 99, 216802 (2007) · 4 pages, 5 figures. To appear in Physical Review Letters, November 2007

arxiv created 2007/11/16 · openalex publication_date 2007/11/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

Citations

• Electric Field Effect in Atomically Thin Carbon Films

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