An ab initio study on energy gap of bilayer graphene nanoribbons with armchair edges

2008/06/02 by Kai-Tak Lam, Gengchiau Liang
Engineering · Materials Science · Physics and Astronomy · #Boron and Carbon Nanomaterials Research #Graphene and Nanomaterials Applications #Graphene research and applications #cond-mat.mtrl-sci #cond-mat.other

paper · pdf · doi:10.1063/1.2938058

published as Appl. Phys. Lett. 92, 223106 (2008) · 15 pages, 4 figures

openalex publication_date 2008/06/02 · arxiv created 2008/06/19 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons (AGNRB) on their widths, interlayer distance (D), and edge doping concentration of boron/nitrogen was investigated using local density approximation and compare to the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB, in general, is smaller than that of AGNRM, of AGNRB exhibits two distinct groups, metal and semiconductor, while AGNRM displays purely semiconducting behavior. Moreover, Eg of AGNRB is highly sensitive to D, indicating a possible application in tuning Eg by varying D. Finally, edge doping of both AGNR systems reduces Eg by 11%–17%/4%–10% for AGNRM∕AGNRB, respectively.

Citations

• Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
• Peculiar width dependence of the electronic properties of carbon nanoribbons
• Electric Field Effect in Atomically Thin Carbon Films
• Edge state in graphene ribbons: Nanometer size effect and edge shape dependence
• Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect