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Transport Measurements Across a Tunable Potential Barrier in Graphene

2007/04/30 by Benjamin Huard, B. Huard, J. A. Sulpizio +8 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.98.236803

published as Physical Review Letters 98, 236803 (2007) · 5 pages, 5 figures

arxiv created 2007/06/07 · openalex publication_date 2007/06/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junction (n-p-n or p-n-p) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.

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