2015/08/31 by Achim Woessner, Pablo Alonso-González, Pablo Alonso‐González +18 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Charge carrier #Grain boundary #Graphene #Graphene research and applications #Materials science #Microstructure #Nanoscopic scale #Nanotechnology #Optoelectronics #Photocurrent #Plasmonic and Surface Plasmon Research #Thermal Radiation and Cooling Technologies #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1038/ncomms10783
published as Nature Communications 7, 10783 (2016)
arxiv created 2015/08/31 · openalex publication_date 2016/02/26 · arxiv updated 2016/03/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue.