2014/04/04 by Jae‐Hyun Lee, Eun Kyung Lee, Won‐Jae Joo +11 · 3 citations
Engineering · Materials Science · #2D Materials and Applications #Graphene research and applications #Nanowire Synthesis and Applications
paper · doi:10.1126/science.1252268
openalex publication_date 2014/04/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.