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Dirac excited state quenching in graphene

2024/09/04 by Jacky Wan, Wan, Jacky C., Trevor Arp +3
Chemistry · Materials Science · #FOS: Physical sciences #Fullerene Chemistry and Applications #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · pdf · doi:10.48550/arxiv.2409.03058

openalex publication_date 2024/09/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac state, called interlayer optoelectronic thermometry, which measures out-of-plane transport of hot carriers in high-mobility, neutral graphene encapsulated within graphene-hBN-graphene heterostructures. At a critical intermediate sample temperature T = 50 K, the electronic temperature Te is quenched, exhibiting an intrinsic cooling rate that exceeds 1014 Kelvin/s within the first picosecond after photoexcitation. Quenching is further enhanced by applying in-plane voltages within the stack-engineered heterostructure. Extreme sensitivity of Te to sample temperature and applied voltages reveals anomalously efficient hot-carrier quenching, which we identify as an essential feature of the strongly interacting hot Dirac excited state.

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