2007/05/31 by Barbaros Özyilmaz, Pablo Jarillo-Herrero, Pablo Jarillo‐Herrero +7 · 27 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.99.166804
published as Phys. Rev. Lett, 99, 166804 (2007) · 4 pages 4 figures, to appear in Phys. Rev. Lett. Original version arXiv:0705.3044v1 was separated and expanded to this current version and arXiv:0709.1731
arxiv created 2007/09/11 · openalex publication_date 2007/10/17 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.