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Global strain-induced scalar potential in graphene devices

2020/09/07 by Lujun Wang, Andreas Baumgartner, A. Baumgärtner +8
Materials Science · Mathematics · Physics and Astronomy · #Acoustics #Classical mechanics #Condensed matter physics #Graphene #Graphene research and applications #Lattice (music) #Materials science #Mathematics #Nanotechnology #Physics #Quantum mechanics #Raman spectroscopy #Scalar (mathematics) #Scalar potential #cond-mat.mes-hall

paper · pdf · doi:10.1038/s42005-021-00651-y

published as Comm. Phys. 4, 147 (2021)

arxiv created 2020/09/07 · openalex publication_date 2021/06/29 · arxiv updated 2021/08/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Abstract By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.

Citations