Towards a quantum resistance standard based on epitaxial graphene

2009/09/07 by Samuel Lara-Avila, Samuel Lara‐Avila, Alexei Kalaboukhov +9 · 13 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Epitaxy #Graphene #Graphene research and applications #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1038/nnano.2009.474

published as Nature Nanotechnology 5, 186 - 189 (2010) · Submitted

arxiv created 2009/09/07 · openalex publication_date 2010/01/17 · arxiv updated 2010/04/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.

Citations

• Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
• Molti passi avanti ma resta da fare una lunga strada
• The electronic properties of graphene
• CODATA recommended values of the fundamental physical constants: 2010
• Room-Temperature Quantum Hall Effect in Graphene
• CODATA recommended values of the fundamental physical constants: 2006
• CODATA recommended values of the fundamental physical constants: 2018

Cited by

• Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
• Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
• Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field
• Mini array of quantum Hall devices based on epitaxial graphene
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• Bound states of charges on top of graphene in a magnetic field
• Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation
• Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
• Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements
• Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
• Semiconductor Quantized Voltage Source
• Berry phase and pseudospin winding number in bilayer graphene
• Visualisation of edge effects in side-gated graphene nanodevices

Related

• Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
• Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
• Expansion of Graphene-Based Device Technology for Resistance Metrology
• From Wye-Delta to Cross-Square Recursion Configurations in Graphene-Based Quantum Hall Arrays
• Marking the Graphene Era in Disseminating the Redefined SI