2012/03/31 by E. Pallecchi, Emiliano Pallecchi, M. Ridene +9
Chemistry · Materials Science · Physics and Astronomy · #Adsorption #Analytical Chemistry (journal) #Bilayer graphene #Chemistry #Condensed matter physics #Diamond and Carbon-based Materials Research #Electron #Epitaxy #Graphene #Graphene research and applications #Layer (electronics) #Materials science #Mesoscopic physics #Monolayer #Nanotechnology #Nuclear magnetic resonance #Photoemission spectroscopy #Physical chemistry #Physics #Quantum Hall effect #Quantum and electron transport phenomena #X-ray photoelectron spectroscopy #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4729824
published as Appl. Phys. Lett. 100, 253109 (2012) · 4 pages, 3 figures
openalex publication_date 2012/06/18 · arxiv created 2012/07/12 · arxiv updated 2012/07/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a 50× 50 \mum2 size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around ν = 2, an evidence of monolayer graphene. We find low electron concentration of 9× 1011 \textrmcm-2 and we show that a doping of 1013\textrmcm-2 which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.