Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

2009/08/31 by T. Shen, J. J. Gu, M. Xu +5 · 2 citations
Materials Science · Physics and Astronomy · #Chemical vapor deposition #Epitaxy #Graphene #Graphene nanoribbons #Graphene research and applications #Hall effect #Magnetoresistance #Quantum and electron transport phenomena #Sublimation (psychology) #Thin film #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.3254329

published as Applied Physics Letters 95, 172105 (2009) · 2 new references added

openalex publication_date 2009/10/26 · arxiv created 2009/10/29 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov–de Haas oscillations in diagonal magnetoresistance of gated epitaxial graphene on SiC (0001).

Citations

• Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
• Electric Field Effect in Atomically Thin Carbon Films
• Substrate-induced bandgap opening in epitaxial graphene

Cited by

• Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
• Berry phase and pseudospin winding number in bilayer graphene