Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

2009/02/27 by Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +15 · 200 citations
Chemistry · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Chemistry #Composite material #Diamond and Carbon-based Materials Research #Electron mobility #Epitaxy #Graphene #Graphene research and applications #Layer (electronics) #Materials science #Nanotechnology #Optics #Optoelectronics #Raman spectroscopy #Silicon carbide #Stacking #Wafer #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/nl901073g

published in Nano Letters 9(8), 2873-2876 (American Chemical Society) · 13 pages including supplimental material. Submitted to Nature Materials 2/23/2009

arxiv created 2009/02/27 · openalex publication_date 2009/07/07 · arxiv updated 2015/05/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on SiC(0001) is highly dependent on thickness and monolayer strain uniformity. Additionally, we achieve high mobility epitaxial graphene (18100 cm(2)/(V s) at room temperature) on SiC(0001) and show that carrier mobility depends strongly on the graphene layer stacking.

Citations

• Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001)
• Electric Field Effect in Atomically Thin Carbon Films
• Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects
• Two-dimensional atomic crystals
• Epitaxial graphene

Cited by

• Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
• Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
• Electronic decoupling of an epitaxial graphene monolayer by gold intercalation