Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

2010/03/11 by Isabella Gierz, Takayuki Suzuki, Dong Su Lee +10
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Chemistry #Condensed matter physics #Decoupling (probability) #Engineering #Epitaxy #Graphene #Graphene research and applications #Inorganic chemistry #Intercalation (chemistry) #Layer (electronics) #Materials science #Molecular Junctions and Nanostructures #Monolayer #Nanotechnology #Optoelectronics #Physics #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.81.235408

7 pages, 4 figures, 1 table

arxiv created 2010/03/11 · openalex publication_date 2010/06/04 · arxiv updated 2015/05/18 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp³-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp²-hybridized graphene layer with improved electronic properties.

Citations

• Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
• Origin of Anomalous Electronic Structures of Epitaxial Graphene on Silicon Carbide
• Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
• Dirac Cones and Minigaps for Graphene on Ir(111)
• Substrate-induced bandgap opening in epitaxial graphene