2015/11/30 by Yong‐Tao Cui, Yong-Tao Cui, Bo Wen +13 · 53 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Electron #Graphene #Graphene research and applications #Landau quantization #Materials science #Physics #Quantization (signal processing) #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.117.186601
published in Physical Review Letters 117(18), 186601 (American Physical Society) · 4 figures
openalex publication_date 2016/10/27 · arxiv created 2016/10/28 · arxiv updated 2016/11/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating. We discuss the implications on transport study of the quantum Hall effect in graphene and related topological states in other two-dimensional electron systems.