2015/12/31 by S. Novikov, N. Lebedeva, J. Hämäläinen +5
Engineering · Materials Science · Physics and Astronomy · #Electrical resistance and conductance #Ferromagnetism #Filling factor #Graphene #Graphene research and applications #Hall effect #Magnetic Field Sensors Techniques #Magnetic field #Quantum Hall effect #Quantum and electron transport phenomena #Realization (probability) #Wheatstone bridge #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4948675
11 pages, 5 figures
arxiv created 2016/02/04 · openalex publication_date 2016/05/06 · arxiv updated 2016/05/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10−7) limited by the used resistance bridge.