2013/08/02 by A. Satrapinski, С. В. Новиков, S. Novikov +1 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Condensed matter physics #Field (mathematics) #Graphene #Graphene research and applications #Hall effect #Magnetic Field Sensors Techniques #Magnetic field #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4826641
arxiv created 2013/08/02 · openalex publication_date 2013/10/21 · arxiv updated 2015/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at temperature T = 1.5 K and at magnetic fields B from 8 T down to 2.5 T, that is much lower than typically used in precision QHR measurement. QHR was measured using cryogenic current comparator resistance bridge with relatively large biasing current Isd = 41 μA to reduce measurement uncertainty. The results showed that at B = 8 T, the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.