Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

2014/10/14 by Andrea Iagallo, Shinichi Tanabe, Shin‐ichi Tanabe +10 · 10 citations
Chemistry · Materials Science · Physics and Astronomy · #Asymmetry #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Diamond and Carbon-based Materials Research #Epitaxy #Graphene #Graphene research and applications #Layer (electronics) #Magnetic field #Materials science #Membrane #Nanotechnology #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Scattering #cond-mat.mes-hall

paper · pdf · doi:10.1088/0268-1242/30/5/055007

published in Semiconductor Science and Technology 30(5), 055007 (IOP Publishing)

arxiv created 2014/10/14 · openalex publication_date 2015/04/07 · arxiv updated 2015/04/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene, Iagallo, Andrea, Tanabe, Shinichi, Roddaro, Stefano, Takamura, Makoto, Sekine, Yoshiaki, Hibino, Hiroki, Miseikis, Vaidotas, Coletti, Camilla, Piazza, Vincenzo, Beltram, Fabio, Heun, Stefan

Citations

• Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
• Towards a quantum resistance standard based on epitaxial graphene
• Room-Temperature Quantum Hall Effect in Graphene