2014/07/30 by Vishal Panchal, Arseniy Lartsev, Alessandra Manzin +3 · 41 citations
Engineering · Materials Science · Physics and Astronomy · #Composite material #Computer science #Condensed matter physics #Conduction band #Doping #Electron #Enhanced Data Rates for GSM Evolution #Graphene #Graphene research and applications #Low-power high-performance VLSI design #Materials science #Nanotechnology #Optoelectronics #Physics #Quantum and electron transport phenomena #Telecommunications #Thermal conduction #cond-mat.mes-hall #physics.app-ph
paper · pdf · doi:10.1038/srep05881
published in Scientific Reports 4(1), 5881 (Nature Portfolio) · 4 Figures, 1 Table
openalex publication_date 2014/07/30 · arxiv created 2018/04/25 · arxiv updated 2018/04/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.