Carrier Transport in Two-Dimensional Graphene Layers

2006/10/31 by E. H. Hwang, Shaffique Adam, S. Adam +1 · 29 citations
Engineering · Materials Science · Physics and Astronomy · #Asymmetry #Charge-carrier density #Condensed matter physics #Conductivity #Density functional theory #Doping #Electrical resistivity and conductivity #Electron #Electron density #Electron mobility #Graphene #Graphene research and applications #Impurity #Materials science #Nanopore and Nanochannel Transport Studies #Nanotechnology #Optics #Physics #Quantum and electron transport phenomena #Saturation (graph theory) #Scattering #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.98.186806

published as Phys. Rev. Lett. 98, 186806 (2007) · 5 pages, 4 figures, published in Phys. Rev. Lett

openalex publication_date 2007/05/03 · arxiv created 2007/05/04 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).

Citations

• Quantum Transport of Massless Dirac Fermions
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