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Relativistic nature of carriers: Origin of electron-hole conduction asymmetry in monolayer graphene

2016/08/31 by Pawan Kumar Srivastava, Swasti Arya, Santosh Kumar +1
Materials Science · Physics and Astronomy · #Asymmetry #Carbon Nanotubes in Composites #Carrier scattering #Charge carrier #Condensed matter physics #Electron #Graphene #Graphene research and applications #Materials science #Monolayer #Nanotechnology #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Thermal conduction #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.96.241407

published as Phys. Rev. B 96, 241407 (2017) · Published version

openalex publication_date 2017/12/15 · arxiv created 2017/12/16 · arxiv updated 2017/12/20 · openalex created_date 2017/12/22 · openalex updated_date 2026/08/05

Abstract

We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be either sample or device-dependent phenomena. Electrical measurements show that monolayer graphene based devices exhibit suppressed electron conduction compared to hole conduction due to the presence of donor impurities which scatter electrons more efficiently. This can be explained by the relativistic nature of charge carriers in a graphene monolayer and can be reconciled with the fact that in a relativistic quantum system transport cross section does depend on the sign of scattering potential in contrast to a nonrelativistic quantum system.

Citations