Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

2007/09/08 by Anindya Das, A. Das, S. Pisana +18 · 9 citations
Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #Graphene research and applications #Thermal properties of materials #cond-mat.mtrl-sci

paper · pdf · doi:10.1038/nnano.2008.67

published as Nature Nanotechnology 3, 210 - 215 (01 Apr 2008) · 7 pages, 8 figures

arxiv created 2007/09/08 · openalex publication_date 2008/03/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, while the 2D peak shows a different response to holes and electrons. Its position increases for hole doping, while it softens for high electron doping. The variation of G peak position is a signature of the non-adiabatic Kohn anomaly at Γ. On the other hand, for visible excitation, the variation of the 2D peak position is ruled by charge transfer. The intensity ratio of G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor charges.

Citations

• Generalized Gradient Approximation Made Simple
• Electric Field Effect in Atomically Thin Carbon Films

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