Probing Electron Spin Resonance in Monolayer Graphene

2016/11/27 by Timothy J. Lyon, T. J. Lyon, Jonas Sichau +6 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Atomic physics #Condensed matter physics #Electron #Electron paramagnetic resonance #Graphene #Graphene research and applications #Materials science #Molecular Junctions and Nanostructures #Monolayer #Nanotechnology #Nuclear magnetic resonance #Physics #Quantum and electron transport phenomena #Quantum mechanics #Resonance (particle physics) #Spin (aerodynamics) #Substrate (aquarium) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.119.066802

published as Phys. Rev. Lett. 119, 066802 (2017) · 5 pages, 3 figures

arxiv created 2016/11/27 · openalex publication_date 2017/08/08 · arxiv updated 2017/08/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The precise value of the g factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO₂ substrate by resistively detected electron spin resonance. Surprisingly, the magnetic moment and corresponding g factor of 1.952±0.002 is insensitive to charge carrier type, concentration, and mobility.

Citations

• Defect-induced magnetism in graphene
• Carrier Transport in Two-Dimensional Graphene Layers
• Interaction-induced enhancement ofgfactor in graphene
• Quantum Spin Hall Effect in Graphene
• Spintronics: Fundamentals and applications
• Manipulation of Spin Transport in Graphene by Surface Chemical Doping
• Electrical detection of spin precession in single layer graphene spin valves with transparent contacts
• Atomic Structure of Graphene on SiO2

Cited by

• Probing local moments in nanographenes with electron tunneling spectroscopy