2008/07/01 by R. Danneau, Fan Wu, F. Wu +11 · 51 citations
Engineering · Materials Science · Physics and Astronomy · #Ballistic conduction #Carbon Nanotubes in Composites #Condensed matter physics #Conductivity #Electron #Fano factor #Graphene #Graphene research and applications #Low-power high-performance VLSI design #Materials science #Noise (video) #Optics #Physics #Quantum mechanics #STRIPS #Shot noise #cond-mat.mes-hall
paper · pdf · doi:10.1007/s10909-008-9837-z
published in Journal of Low Temperature Physics 153(5-6), 374-392 (Springer Science+Business Media) · Extended version (19 pages, 10 figures) of Phys. Rev. Lett. 100, 196802 (2008). Additional data on the effect of disorder and non-parallel leads. Submitted for publication in Journal of Low Temperature Physics for the Proceedings of the International Symposium on Quantum Phenomena and Devices at Low Temperatures (ULTI 2008), Espoo, Finland
arxiv created 2008/07/01 · openalex publication_date 2008/10/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio W/L graphene strips, we have measured shot noise at low frequency (f = 600--850 MHz) in the temperature range of 4.2--30 K. We observe a minimum conductivity of \frac4e2πh and a finite and gate dependent Fano factor reaching the universal value of 1/3 at the Dirac point, i.e. where the density of states vanishes. These findings are in good agreement with the theory describing that transport at the Dirac point should occur via evanescent waves in perfect graphene samples with large W/L. Moreover, we show and discuss how disorder and non-parallel leads affect both conductivity and shot noise.