2007/04/30 by Dmitry A. Abanin, D. A. Abanin, Leonid Levitov +1
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1126/science.1144672
published as Science 317, 641 (2007), originally published in Science Express on 28 June 2007 · 4 pages, 3 figures, available online at: http://www.sciencemag.org/cgi/content/abstract/1144672
openalex publication_date 2007/06/29 · arxiv created 2007/06/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Recent experimental work on locally gated graphene layers resulting in p-n junctions has revealed the quantum Hall effect in their transport behavior. We explain the observed conductance quantization, which is fractional in the bipolar regime and an integer in the unipolar regime, in terms of quantum Hall edge modes propagating along and across the p-n interface. In the bipolar regime, the electron and hole modes can mix at the p-n boundary, leading to current partition and quantized shot-noise plateaus similar to those of conductance, whereas in the unipolar regime transport is noiseless. These quantum Hall phenomena reflect the massless Dirac character of charge carriers in graphene, with particle/hole interplay manifest in mode mixing and noise in the bipolar regime.