2016/07/03 by Junxi Duan, Xiaoming Wang, Xinyuan Lai +5 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Chip #Composite material #Electrical engineering #Engineering physics #Graphene #Graphene research and applications #Materials science #Miniaturization #Nanotechnology #Optoelectronics #Power (physics) #Power factor #Seebeck coefficient #Thermal conductivity #Thermal properties of materials #Thermodynamics #Thermoelectric cooling #Thermoelectric effect #Thermoelectric materials #cond-mat.mes-hall
paper · pdf · doi:10.1073/pnas.1615913113
14 pages, 3 figures, 10 pages supporting information
arxiv created 2016/07/03 · openalex publication_date 2016/11/23 · arxiv updated 2017/03/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
Significance The miniaturization of electronic components and the excessive heating produced by the increased power densities in these small devices has heightened the need for on-chip cooling solutions. This has prompted a search for materials with large thermoelectric power factor and thermal conductivity that could be integrated in active thermoelectric coolers. Here, we report record thermoelectric power factors achieved in graphene on hexagonal boron nitride devices, corresponding to more than doubling the highest reported room temperature bulk values. In these devices, the smooth and highly efficient gating between electron- and hole-doped sectors, which facilitates switching the polarity of the Seebeck coefficient, extends a distinct advantage for on-chip thermoelectric cooling applications. Based on these results, we propose an integrated graphene-based active on-chip cooler.