2019/05/30 by Scott E. Lillie, Nikolai Dontschuk, David A. Broadway +4 · 1 citation
Materials Science · Physics and Astronomy · #Composite material #Condensed matter physics #Diamond #Diamond and Carbon-based Materials Research #Doping #Electric field #Field-effect transistor #Force Microscopy Techniques and Applications #Graphene #Graphene research and applications #Materials science #Microscopy #Nanotechnology #Optics #Optoelectronics #Oxide #Physics #Transistor #Vacancy defect #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci #physics.app-ph
paper · pdf · doi:10.1103/physrevapplied.12.024018
published as Phys. Rev. Applied 12, 024018 (2019) · 13 pages, 9 figures
arxiv created 2019/05/30 · openalex publication_date 2019/08/09 · arxiv updated 2019/08/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Imaging techniques using nitrogen-vacancy centers in diamond are appealing for characterizing two-dimensional devices and materials, but their compatibility with gated devices is largely unexplored. This work uses wide-field N-V techniques to examine graphene field-effect transistors fabricated on the diamond's surface, and highlights some of the challenges in this approach. Current densities in the device are mapped at different doping conditions, and substantial modulation of the electric field at the diamond surface is seen, suggesting a complex electrostatic response of the multilayered structure. Pathways to mitigate the invasiveness of the imaging technique are discussed.